Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”

I. Fina, X. Marti, D. Yi, J. Liu, J. H. Chu, C. Rayan-Serrao, S. Suresha, A. B. Shick, J. Zelezny, T. Jungwirth, J. Fontcuberta, R. Ramesh

Nature Communications 5, Article number: 4671;



The electronic structure and the electric transport properties of the  antiferromagnetic semiconductor Sr2IrO4 is demonstrated to be largely dependent on the direction of the atomic spins, thus giving rise to a significant anisotropic magnetoresistance. Integration of these antiferromagnetic semiconducting layers with ferromagnetic electrodes may lead to new magnetic memory concepts.

See more posts on ICMAB related to: Oxides for new-generation electronics

Related Topics: Oxides for new-generation electronics

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