Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”
Scientific Highlights 23 September 2014 3656 hits
I. Fina, X. Marti, D. Yi, J. Liu, J. H. Chu, C. Rayan-Serrao, S. Suresha, A. B. Shick, J. Zelezny, T. Jungwirth, J. Fontcuberta, R. Ramesh
The electronic structure and the electric transport properties of the antiferromagnetic semiconductor Sr2IrO4 is demonstrated to be largely dependent on the direction of the atomic spins, thus giving rise to a significant anisotropic magnetoresistance. Integration of these antiferromagnetic semiconducting layers with ferromagnetic electrodes may lead to new magnetic memory concepts.
Related Topics: Materials for information science and electronics