Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Scientific Highlights Materials for information science and electronics 26 April 2019 363 hits jags

Mengdi Qian, Ignasi Fina,Florencio Sánchez, Josep Fontcuberta, Small, 10 February 2019

https://doi.org/10.1002/smll.201805042

In this study, we show how to write and read information stored in a resistive switching device, in a state having an identical large resistance. The two different logic states correspond to an UP-DOWN or DOWN-UP ferroelectric states in an anti-serial connection of two ferroelectric capacitors, having an identical series electrical resistance

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
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