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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Scientific Highlights Materials for information science and electronics 27 July 2014 5172 hits jags

2014-07-15 13-12-36

P. de CouxR. BacheletB. Warot-FonroseV. SkumryevL. LupinaG. NiuT. SchroederJ. Fontcuberta and F. Sánchez
Appl. Phys. Lett. 105, 012401 (2014)

DOI: dx.doi.org/10.1063/1.4887349


A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate thatferromagnetic CoFe2O4films can be grown epitaxially on Si(111) using a Y2O3buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4filmspresent high crystal quality and high saturation magnetization.

Related Topics: Materials for information science and electronics

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