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Ha sortit publicat a la revista Nature, vol. 469, pp. 189-194, l'article: Two-dimensional electron gas with universal subbands at the surface of SrTiO3, del qual es co-autor el Dr. Gervasi Herranz del nostre institut.
"Fast moving electrons at the surface of an oxide insulator."
Current microelectronics is based on silicon technology. As modern electronic devices have progressed geometrically, it has become evident the need to find alternative materials that can ensure continued progress in the field. The discovery of a conductive layer of about two nanometers deep in the insulating oxide (SrTiO3)-without adding a layer of another material- is a major step forward towards a microelectronics based on oxides. The finding of this high-mobility surface state, reported in Nature, has been uncovered by performing angle-resolved photoemission spectroscopy (ARPES) on SrTiO3 single crystals, a popular wide-bandgap insulator.
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"Two-dimensional electron gas with universal subbands at the surface of SrTiO3"
Santander-Syro, A. F. et al.
Nature 469, 189-193 (2011) doi:10.1038/nature09720
The Figure displays the electronic subbands at the surface of a SrTiO3 crystal obtained by ARPES.