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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. de Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta and F. Sánchez. Appl. Phys. Lett. 105, 012401 (2014)

Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3 Thin Films for Low Cost Nonvolatile Memories

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César Moreno†, Carmen Munuera†, Sergio Valencia‡, Florian Kronast‡, Xavier Obradors†, and Carmen Ocal*†
† Institut de Ciència de Materials de Barcelona
‡ Helmholtz-Zentrum-Berlin; 
Nano Lett., 2010, 10 (10), pp 3828-3835
DOI: 10.1021/nl1008162
Publication Date (Web): September 13, 2010
Copyright © 2010 American Chemical Society

On the basis of a scanning probe microscopy strategy, we propose a combined methodology capable to program nonvolatile multilevel data and read them out in a noninvasive manner. In the absence of the common two-electrode cell geometry, this nanoscale approach permits, in addition, investigating the relevance of inherent film properties. We demonstrate the feasibility of modifying the local electronic response of La0.7Sr0.3MnO3 to obtain nanostructures with switchable resistance embedded in low cost oxide thin films, which constitutes a promising approach for fabricating high density nonvolatile memories.
Keywords: Resistive switching; Kelvin probe microscopy; RRAM; transition metal oxides


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