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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. de Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta and F. Sánchez. Appl. Phys. Lett. 105, 012401 (2014)

Organic metal–organic semiconductor blended contacts in single crystal field-effect transistors

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Raphael Pfattner ,  Marta Mas-Torrent ,  César Moreno ,  Joaquim Puigdollers ,  Ramón Alcubilla ,  Ivano Bilotti ,  Elisabetta Venuti ,  Aldo Brillante ,  Vladimir Laukhin ,  Jaume Veciana and Concepció Rovira;
J. Mater. Chem., 2012, Advance Article


DOI: 10.1039/C2JM32925E

A novel approach to blend organic source and drain electrodes with semiconducting organic single crystals in field-effect transistors is described. The devices fabricated show a very high performance which is ascribed to a notable reduction of the contact resistance as measured by Kelvin probe microscopy. The average mobility is found to be four-fold that obtained from devices where no interpenetration of the two materials takes place. This work highlights therefore the importance of the contacts in organic field-effect transistors not only in terms of the alignment of the energy levels but also with respect to the interface morphology.

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