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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

P. de Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta and F. Sánchez. Appl. Phys. Lett. 105, 012401 (2014)

Laterally confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

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26-06-2012 13-53-00

M. Foerster, R. Bachelet, V. Laukhin, J. Fontcuberta, G. Herranz, and F. Sánchez;

Appl. Phys. Lett. 100, 231607 (2012)

http://dx.doi.org/10.1063/1.4728109 (5 pages)

 


A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems.

 

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