Molecular Beam Epitaxy

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Scientific Supervisor: Dr. M. Isabel Alonso

Presentation

The Laboratory of MBE (L-MBE) is a scientific service developing own research and supporting research of other groups based on group IV semiconductor heterostructures. The L-MBE belongs to the Scientific Service Unit and is also part of the Laboratory of Optical Properties. The service is scientifically coordinated by Dr. M. Isabel Alonso and governed by a commission detailed below. The service is managed according to the regulations established by the commission.

 

Comission Members

  • Prof. Joan Bausells (IMB-CNM-CSIC)
  • Dr. Javier Rodriguez-Viejo (UAB)
  • Dr. Jordi Fraxedas (CIN2-CSIC)
  • Prof. Teresa Puig (ICMAB-CSIC)
  • Dr. Miquel Garriga (ICMAB-CSIC)

Scientific Supervisor

  • Dr. M. Isabel Alonso  (ICMAB-CSIC)

Technician

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Forms:

Hoja de Servicio

Molecular Beam Epitaxy Protocol


Equipment

  • Ultra-high vacuum system (Omicron) composed of Fast-entry-lock chamber and main chamber for MBE deposition on 10cm wafers.


Sources:

  • Electron-beam evaporator for Si.
  • High temperature effusion cell for Ge.
  • Carbon sublimation source with a pyrolytic graphite filament.
  • High temperature effusion cell for B.
  • Low temperature effusion cell for Sb.
  • GaP decomposition cell for P2.


Control instruments:

  • Process software.
  • Cross beam mass analyser for Si flux control or RGA.
  • Rate monitor (UHV quartz microbalance sensor head).
  • RHEED e-source (30 kV) and screen on lead glass.

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