• SCIENTIFIC HIGHLIGHTS

Large Room-Temperature Electroresistance in Dual-Modulated Ferroelectric Tunnel Barriers

Imagen3

Greta Radaelli, Diego Gutiérrez, Florencio Sánchez, Riccardo Bertacco, Massimiliano Stengel and Josep Fontcuberta*

Advanced Materials

DOI: 10.1002/adma.201405117

Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.

See more posts on ICMAB related to: Oxides for new-generation electronics

Related Topics: Oxides for new-generation electronics

Also on ICMAB...

Search

Your experience on this site will be improved by allowing cookies Cookie Settings