Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering

nano457428f2 online

J S Reparaz, N Peica, R Kirste, A R Goñi, M R Wagner, G Callsen, M I Alonso, M Garriga, I C Marcus, A Ronda, I Berbezier, J Maultzsch, C Thomsen and A Hoffmann;

Nanotechnology Volume 24 Number 18



Local strain and Ge content distribution in self-assembled, in-plane Ge/Si nanowires grown by combining molecular beam epitaxy and the metal-catalyst assisted-growth method were investigated by tip-enhanced Raman scattering. We show that this technique is essential to study variations of physical properties of single wires at the nanoscale, a task which cannot be achieved with conventional micro-Raman scattering. As two major findings, we report that (i) the Ge distribution in the (001) crystallographic direction is inhomogeneous, displaying a gradient with a higher Ge content close to the top surface, and (ii) in contrast, the (uncapped) wires exhibit essentially the same small residual compressive strain everywhere along the wire.

See more posts on ICMAB related to: Oxides for new-generation electronics

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