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Quantum wells at the LaAlO3/SrTiO3 interface with tunable electron states

Quantum wells at the LaAlO3/SrTiO3 interface with tunable electron states

Scientific Highlights Materials for information science and electronics 13 October 2014 5453 hits jags

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D. Pesquera, M. Scigaj, P. Gargiani, A. Barla, J. Herrero-Martín, E. Pellegrin, S. M. Valvidares, J. Gázquez, M. Varela, N. Dix, J. Fontcuberta, F. Sánchez, and G. Herranz

Phys. Rev. Lett. 113, 156802 (2014)

DOI: http://dx.doi.org/10.1103/PhysRevLett.113.156802

Quantum wells with d-electrons at the LaAlO3(LAO)/SrTiO3(STO) interface exhibit physical properties, such as superconductivity or magnetism, unseen in conventional semiconductors (Si, Ge, GaAs, …). We have demonstrated that the symmetry of the conduction band inside the QWs can be selected at whish. This opens up novel perspectives to manipulate the electronic properties of QWs at the LAO/STO interface.

 

Related Topics: Materials for information science and electronics

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