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Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

Scientific Highlights Oxides for new-generation electronics 07 September 2018 1644 hits Anna May Masnou

J. LyuI. FinaR. SolanasJ. Fontcuberta, and F. Sánchez. Appl. Phys. Lett. 113, 082902 (2018)

DOI: 10.1063/1.5041715

This study is the first on ferroelectric hafnium oxide published by the MULFOX group. This ferroelectric metastable phase is quite a new topic, and in this work they present its excellent ferroelectric properties, including fatigue and retention. 

Abstract: Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles.

Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.

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