Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, and R. Bertacco
In Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states has been settled, meaning a magnetic memory with 0 net magnetic moment. These metastable states are therefore insensitive to external magnetic fields (tested up to 2 T), thus constituting an absolutely shielded memory.
Related Topics: Oxides for new-generation electronics