Strain-Controlled Responsiveness of Slave Half-Doped Manganite La0.5Sr0.5MnO3 Layers Inserted in BaTiO3 Ferroelectric Tunnel Junctions
Greta Radaelli,* Diego Gutiérrez, Mengdi Qian, Ignasi Fina, Florencio Sánchez, Lorenzo Baldrati, Jakoba Heidler, Cinthia Piamonteze, Riccardo Bertacco, Josep Fontcuberta*. Adv. Elec. Materials 22nd Nov. 2016, DOI: 10.1002/aelm.201600368
In ferroelectric BaTiO3 tunnel junctions, integrating tensile strained slave LaSrMnO (HD) layers, polarization reversal promotes an orbital-reordering and a concomitant metal–insulator transition in the HD layer that largely enhances the electroresistance of the junctions. Radically different results are obtained under compressive strain.
Related Topics: Oxides for new-generation electronics