logo icmab ochoa 02 01 logo icmab ochoa 02 01
  • NEWS

Strain-Engineered Ferromagnetism in LaMnO3 Thin Films

cg 2015 008843 0006

Jaume RoquetaAlberto Pomar*Lluis BalcellsCarlos FronteraSergio ValenciaRadu AbrudanBernat BozzoZorica KonstantinovićJosé Santiso, and Benjamín Martínez;  
Cryst. Growth Des., 2015, 15 (11), pp 5332–5337;  
DOI: 10.1021/acs.cgd.5b00884

 


 

The amount of structural strain in pulsed laser deposited LaMnO3 thin films is controlled by modifying the nominal oxygen pressure during growth. Bulklike antiferromagnetic films are obtained when reducing conditions lead to partially relaxed films. On the other hand, under oxidizing conditions, fully strained films exhibit ferromagnetic insulating behavior related to strain-induced orbital ordering.

 

 

 

 

See more posts on ICMAB related to: Materials for information science and electronics

Related Topics: Materials for information science and electronics

Also on ICMAB...

Trending on ICMAB...

Your experience on this site will be improved by allowing cookies Cookie Settings