Strain-Engineered Ferromagnetism in LaMnO3 Thin Films
- Scientific Highlights 26 November 2015 4827 hits
Jaume Roqueta, Alberto Pomar*, Lluis Balcells, Carlos Frontera, Sergio Valencia, Radu Abrudan, Bernat Bozzo, Zorica Konstantinović, José Santiso, and Benjamín Martínez;
Cryst. Growth Des., 2015, 15 (11), pp 5332–5337;
The amount of structural strain in pulsed laser deposited LaMnO3 thin films is controlled by modifying the nominal oxygen pressure during growth. Bulklike antiferromagnetic films are obtained when reducing conditions lead to partially relaxed films. On the other hand, under oxidizing conditions, fully strained films exhibit ferromagnetic insulating behavior related to strain-induced orbital ordering.
Related Topics: Oxides for new-generation electronics