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Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Scientific Highlights Materials for information science and electronics 02 February 2018 969 hits jags

Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta & Florencio Sánchez. Scientific Reports 8, Article number: 495 (2018). doi:10.1038/s41598-017-18842-5

Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 °C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films.

See more posts on ICMAB related to: Jike Lyu , Ignasi Fina , Raul Solanas , Josep Fontcuberta , Florencio Sánchez.

Related Topics: Materials for information science and electronics

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