Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”

I. Fina, X. Marti, D. Yi, J. Liu, J. H. Chu, C. Rayan-Serrao, S. Suresha, A. B. Shick, J. Zelezny, T. Jungwirth, J. Fontcuberta, R. Ramesh

Nature Communications 5, Article number: 4671;

 

doi:10.1038/ncomms5671

The electronic structure and the electric transport properties of the  antiferromagnetic semiconductor Sr2IrO4 is demonstrated to be largely dependent on the direction of the atomic spins, thus giving rise to a significant anisotropic magnetoresistance. Integration of these antiferromagnetic semiconducting layers with ferromagnetic electrodes may lead to new magnetic memory concepts.

Oxides for new-generation electronics

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