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Meet Ignasi Fina, interviewed at Materials Horizons Emerging Investigator Series
The journal Materials Horizons (RSC) includes in its last "Emerging Investigator Series" collection, an interview to ICMAB researcher Ignasi Fina, for his recent publication "Local manipulation of metamagnetism ...Ignasi Fina interviewed at "La Buena Tarde" in Radio Asturia
On 1 April 2020, the ICMAB researcher Ignasi Fina, from the Laboratory of Multifunctional Thin Films And Complex Structures (MULFOX) group, was interviewed in the radio show “La Buena Tarde”, broadcasted ...Ignasi Fina and Gervasi Herranz, co-authors of the book "Oxide Spintronics
The book "Oxide Spintronics" (Pan Stanford Publishing) has recently been published. Ignasi Fina and Gervasi Herranz, reserachers at the MULFOX group (Laboratory of Multifunctional Thin Films and Complex ...Comfuturo project granted to Ignasi Fina for his project on improving photovoltaic efficiency
... no convencionales (NANOXISOL)" (Oxides nanoengineering for improvement of photovoltaic efficiency using non-conventional routes) presented by Ignasi Fina in this second edition. "Obtaining huge amounts ...Judith Guasch, Arántzazu González and Ignasi Fina awarded with a Ramón y Cajal grant #RYC
Three ICMAB researchers have been granted with a Ramon y Cajal grant from the Spanish Ministry of Economy, Industry and Competitiveness. Ignasi Fina, from the MULFOX group, in the area of Materials ...Ignasi Fina, Young Researchers First Prize at the Biennial Meeting of the RSEF
Ignasi Fina, Postoctoral Researcher at the MULFOX group at ICMAB, has been awarded with the First Prize of the Young Researchers Award - Postdoctoral Researchers category, for his contribution to the XXXXI ...Ignasi Fina talks about antiferromagnetic materials in Radio Kanal Barcelona
... etc. are some of the main topics. Ignasi Fina, from the MULFOX group, was at the programme on May 16, 2018, in the section "The materials of the future" to talk about antiferromagnetic materials. Listen ...Xiao Long will defend his PhD Thesis on Friday 25 Nov at ICMAB
... electroresistance (ER) effect. Supervisors: Josep Fontcuberta, ICMAB-CSIC Ignasi Fina, Diamond Light Source PhD Comittee: President: Jordi Sort Viñas, Universitat Autònoma de Barcelona, ...Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
In this work, we report on the critical role of the substrate selection to determine the amount of the metastable orthorhombic ferroelectric phase in La doped HfO2 films. Films grown on LSMO with smaller ...Congratulations Dr. Yunwei Sheng, new ICMAB PhD graduate!
... structures" on Thursday, 27 October 2022 at ICMAB The PhD thesis was supervised by Josep Fontcuberta and Ignasi Fina, from the Multifunctional Thin Films and Complex Structures (MULFOX) Group at ICMAB-CSIC. ...Open JAE Intro CSIC 2022 with 15 training programmes from ICMAB
... for Functional Quantum Devices Anna Palau (This email address is being protected from spambots. You need JavaScript enabled to view it.) Emerging materials for energy efficient neuromorphic computing Ignasi Fina (This email address is being protected from spambots. You need JavaScript enabled to view it.) Thermal Transport in Nanostructured Semiconductors ...Yunwei Sheng will defend her PhD Thesis on 27 Oct 2022 at ICMAB
... Ignasi Fina, MULFOX group, ICMAB-CSIC PhD Comittee: President: Sylvia Matzen, Paris-Saclay University, France Secretary: Mariona Coll Bau, Institut de Ciència de Materials de Barcelona, ICMAB-CSIC ...Control of up-to-down/down-to-up light-induced ferroelectric polarization reversal
Light control of ferroelectric polarization is of interest for the exploitation of ferroelectric thin films in ultrafast data storage and logic functionalities. The rapidly oscillating electric field of ...We had a great time at the European Researchers' Night 2022
... e Innovación. Ignasi Fina at the Science Talks on 30/9/2022 for the EU Researchers' Night at CosmoCaixa| ICMAB-CSIC "Nous materials per ordinadors més eficients que el cervell?" (New materials ...Congratulations Dr. Tingfeng Song, new ICMAB graduate!
... of epitaxial HfO2-based thin films" on Monday, 19 September 2022 at ICMAB. The PhD thesis was supervised by Florencio Sánchez and Ignasi Fina, from the Multifunctional Thin Films and Complex Structures ...Welcome to the week of the European Researchers' Night in Catalunya!
... Barcelona (Sala Àgora): Friday, 30/09, 6:00 - 6:30 pm - "Nous materials per ordinadors més eficients que el cervell?" (New materials for computers more efficient than the brain?) by Ignasi Fina (ICMAB-CSIC) ...New Cover in Materials Horizons on controlling ferroelectric polarization state with light
... ferroelectric capacitor" explains Ignasi Fina, ICMAB researcher. Sketch of the cover in Matrials Horizons New concepts Ferroelectric materials are fascinating and useful because they show spontaneous ...Talent Attraction and Recruiting
... more won the position in 2019 and were incorporated in 2020 (Jaume Gázquez, Alexandre Ponrouch, Anna Laromaine), and 4 in 2020 (Ignasi Fina, Ana M. López and Arancha González, and Miquel Royo). Technicians ...Tingfeng Song will defend his PhD Thesis on 19 Sept at ICMAB
... fatigue mechanisms in epitaxial HfO2-based thin films are also investigated. Supervisors: Florencio Sánchez Barrera, MULFOX group, ICMAB-CSIC Ignasi Fina, MULFOX group, ICMAB-CSIC PhD Comittee: ...Bulk photovoltaic effect modulated by ferroelectric polarization back-switching
Short-circuit photocurrent due to bulk photovoltaic effect displays an oscillatory dependence on the polarization state of light. Here, we explore how the ferroelectric polarization direction in h-LuMnO3 crystals ...Hosting offers for the Marie Skłodowska-Curie Actions Postdoctoral Fellowships 2022
... and Ignasi Fina (MULFOX group) Chiral molecular materials for energy capture – David Amabilino (SusMoSys Group) Spintronic memory and logic devices – Can Onur Avci (MULFOX group) Phonon diodes and ...JAE Intro 2022: CSIC Introduction to Research Grants for University Students
... characterization tools. Moreover, he/she will be required to develop his/her presentation and writing skills. Contact: Ignasi Fina (This email address is being protected from spambots. You need JavaScript enabled to view it.) Group: Multifunctional Thin Films and Complex Structures ...Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers
Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance ...Impact of non-ferroelectric phases on switching dynamics in epitaxial ferroelectric Hf0.5Zr0.5O2 films
Determining the switching speed and mechanisms in ferroelectric HfO2 is essential for applications. Switching dynamics in orthorhombic epitaxial ferroelectric Hf0.5Zr0.5O2 films with either significant ...Bendable Polycrystalline and Magnetic CoFe2O4 Membranes by Chemical Methods
The preparation and manipulation of crystalline yet bendable functional complex oxide membranes has been a long-standing issue for a myriad of applications, in particular, for flexible electronics. Here, ...Energy materials and Nanoelectronic materials and devices at E-MRS Spring Meeting 2022
Two ICMABers co-organize two symposia at E-MRS Spring Meeting 2022, which will be virtual this year, from 30 May to 3 June 2022: Cristina Flox and Ignasi Fina. The European Materials Research Society ...ICMAB endorses the statements that condemn the Russian invasion of Ukraine
... At ICMAB, Ignasi Fina and the MULFOX group offer the following: We offer a full-time contract for period between 2 months to 2 years to be developed at ICMAB-CSIC, in Barcelona, in the area of Materials ...Improved polarization and endurance in ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(110)
The metastable orthorhombic phase of Hf0.5Zr0.5O2 (HZO) can be stabilized in thin films on La0.67Sr0.33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy that results in (111)-HZO oriented ...Xavier Obradors at the 4YFN Frontier Tech Programme with Zina Jarrahi Cinker and John Hoffmann
... del Rey, M. Rosa Palacín, Xavier Obradors, Zina Jarrahi Ccinker, Albert Verdaguer, Ignasi Fina, Agustín Mihi, Martí Gich. At ICMAB, we could show her some of the technologies that we are working on, ...Large enhancement of ferroelectric polarization in Hf0.5Zr0.5O2 films by low plasma energy pulsed laser deposition
The ferroelectric phase of HfO2 is generally stabilized in polycrystalline films, which typically exhibit the highest polarization when deposited using low oxidizing conditions. In contrast, epitaxial ...Impact of La concentration on ferroelectricity of La-doped HfO2 epitaxial thin films
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films ...In the last "Bojos per la Física" at ICMAB students could learn about magnetism and piezoelectricit
... the C. elegans on the microscope. For the session, which took place on Saturday, 9 October 2021 in the morning, we counted with the following researchers and programme: Ignasi Fina, from the MULFOX ...Bulk photovoltaic effect in hexagonal LuMnO3 single crystals
When illuminating a non-centrosymmetric material with light of energy higher than the bandgap, a net current appears because the electrons do not see the same electronic environment in one direction and ...2019
... Oxide Spintronics Authors: Ignasi Fina, Xavi Martí Authors: Ignasi Fina, Xavi Martí Chapter 6: Spintronic Functionalities in Multiferroic Oxide-Based Heterostructures Authors: Gervasi Herranz ...High-Temperature Synthesis and Dielectric Properties of LaTaON2
The development of new synthetic methodologies of perovskite oxynitrides is challenging but necessary for the search of new compounds and the investigation of new properties. Here, we report a new method ...Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue in epitaxial Hf0.5Zr0.5O2 (HZO) instead of polycrystalline samples. Using different ...Doctoral INPhINIT Fellowships Call 2022: Your doctorate, your story (at ICMAB)
... thesis will be supervised by Ignasi Fina (shorturl.at/gqHM5) with an intensive production and several on-going projects regarding the tòpic during the last years. Contact: This email address is being protected from spambots. You need JavaScript enabled to view it. Website: MULFOX ...Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. Complementary metal oxide semiconductor-compatible ferroelectric ...Switchable photovoltaic response in hexagonal LuMnO3 single crystals
Hexagonal manganites, such as h-LuMnO3, are ferroelectric with its polar axis along the hexagonal axis and have a narrow electronic bandgap (≈1.5 eV). Using Pt electrodes, h-LuMnO3 single crystals display ...The European Researcher’s Night is back – and with presential activities!
... at CSIC Residència d'Investigadors: 22/9, 6:00 - 8:00 pm - "Nous materials per a nous dispositius electrònics" by Ignasi Fina (ICMAB-CSIC) This event is co-organized by the CSIC research centers ...Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films
The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose, high-quality fully ...Insights into the atomic structure of the interface of ferroelectric Hf0.5Zr0.5O2 grown epitaxially on La2/3Sr1/3MnO3
Epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films allows for the stabilization of the metastable orthorhombic phase with robust ferroelectric properties. So far, the ferroelectric phase is most commonly ...Thickness effect on ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm
Stabilization of the orthorhombic phase of HfO2 with La allows very high polarization and endurance. However, these properties have not been confirmed yet in films having thickness of less than 10 nm. ...Stabilization of the Ferroelectric Phase in Epitaxial Hf1–xZrxO2 Enabling Coexistence of Ferroelectric and Enhanced Piezoelectric Properties
Systematic studies on polycrystalline Hf1–xZrxO2 films with varying Zr contents show that HfO2 films are paraelectric (monoclinic). If the Zr content is increased, films become ferroelectric (orthorhombic) ...Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of ...Pablo Guardia and Raphael Pfattner awarded with a Ramón y Cajal grant #RyC
Two ICMAB researchers have been granted with a Ramón y Cajalgrant from the Spanish Ministry of Science and Innovation. Raphael Pfattner, from the Molecular Nanoscience and Organic Materials (NANOMOL) ...New JAE Intro SOMdM 2021 call for Master Student’s research internships
A new JAE Intro SOMdM 2021 call is now open for Research Fellowships for University Students at Severo Ochoa and María de Maeztu Research Centers. From ICMAB, the call is open to students who will course ...ICMAB will be at the MEMEnginy UAB fair on 29 April 2021
... year, MEMEnginy UAB will be a virtual event on Thursday, 29 April 2021. ICMAB will be in the event with a conference by ICMAB researcher Ignasi Fina on "Nanociència i nanomaterials per la nova electrònica" ...Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been ...
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