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Meet Ignasi Fina, interviewed at Materials Horizons Emerging Investigator Series
The journal Materials Horizons (RSC) includes in its last "Emerging Investigator Series" collection, an interview to ICMAB researcher Ignasi Fina, for his recent publication "Local manipulation of metamagnetism ...Ignasi Fina interviewed at "La Buena Tarde" in Radio Asturia
On 1 April 2020, the ICMAB researcher Ignasi Fina, from the Laboratory of Multifunctional Thin Films And Complex Structures (MULFOX) group, was interviewed in the radio show “La Buena Tarde”, broadcasted ...Ignasi Fina and Gervasi Herranz, co-authors of the book "Oxide Spintronics
The book "Oxide Spintronics" (Pan Stanford Publishing) has recently been published. Ignasi Fina and Gervasi Herranz, reserachers at the MULFOX group (Laboratory of Multifunctional Thin Films and Complex ...Comfuturo project granted to Ignasi Fina for his project on improving photovoltaic efficiency
... no convencionales (NANOXISOL)" (Oxides nanoengineering for improvement of photovoltaic efficiency using non-conventional routes) presented by Ignasi Fina in this second edition. "Obtaining huge amounts ...Judith Guasch, Arántzazu González and Ignasi Fina awarded with a Ramón y Cajal grant #RYC
Three ICMAB researchers have been granted with a Ramon y Cajal grant from the Spanish Ministry of Economy, Industry and Competitiveness. Ignasi Fina, from the MULFOX group, in the area of Materials Science; ...Ignasi Fina, Young Researchers First Prize at the Biennial Meeting of the RSEF
Ignasi Fina, Postoctoral Researcher at the MULFOX group at ICMAB, has been awarded with the First Prize of the Young Researchers Award - Postdoctoral Researchers category, for his contribution to the XXXXI ...Ignasi Fina talks about antiferromagnetic materials in Radio Kanal Barcelona
... etc. are some of the main topics. Ignasi Fina, from the MULFOX group, was at the programme on May 16, 2018, in the section "The materials of the future" to talk about antiferromagnetic materials. Listen ...Mariona Coll in a El 9 TV programme !...i bona lletra"
... importance of basic research, and the current lack of female representation in STEM careers. Watch the full interview with Mariona Coll (CAT) More information Mariona Coll and Ignasi Fina awarded ...Storing information with light
... typically volatile and the material recovers its initial state after some dwell time” says ICMAB researcher Ignasi Fina, co-author of the study. “For devices to be used in computing and data storage, non-volatile ...Three ICMAB research projects receive an i-Link+ grant for international collaborations
... that will be collaborating with one or more international groups: Electrocaloric effects in CMOS compatible ferroelectric oxides for cooling applications Ignasi Fina, Florencio Sánchez, Huan Tan, and ...The most prolific ICMAB Authors of 2020 - A year in review
... forms and the fact that they are made of a semi-metal. MULFOX Researcher Ignasi Fina Ignasi Fina, from the Multifunctional Thin Films and Complex Structures (MULFOX) Group, works on macro- and nano-scopic ...Engineering Polar Oxynitrides: Hexagonal Perovskite BaWON2
Non‐centrosymmetric polar compounds have important technological properties. Reported perovskite oxynitrides show centrosymmetric structures, and for some of them high permittivities have been observed ...Fourth visit of the Scientific Advisory Board at ICMAB - online!
... Coordinator: Gervasi Herranz RL3 Highlights presented: Alberto Pomar; Resistive switching in strontium iridate thin films Amparo Fuertes: Design of new polar oxynitride perovskites Ignasi Fina: ...Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7
There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex ...SAB 2020
... FeRh tapes as memory elements by Ignasi Fina, MULFOX Group DOWNLOAD PDF Design of new polar oxynitride perovskites ...The OPTOFEM 2020 school counted with 85 participants from around the world
... 85 participants from 18 countries around the world, who attended more than 16 hours of lectures on the topic. The OPTOFEM 2020 was organized by ICMAB researchers Josep Fontcuberta and Ignasi Fina, ...Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of ...Welcome Carlos Zarco at ICMAB!
Hello everyone! My name is Carlos Zarco and I'm from Barcelona. I am a last-year student of Phisics and Chemistry at UAB and I am performing my degree's final project at ICMAB with Ignasi Fina. ...New semiconductors with strong optical response in the framework of a MIT "la Caixa" Foundation projec
... is focused on the investigation of new materials for photovoltaic applications. Ignasi Fina is the ICMAB researcher involved in the study. In the article published in Physical Review Materials, a ...Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
... and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films Jike Lyu, Ignasi Fina, and Florencio Sánchez. Appl. Phys. Lett. 117, 072901 (2020) DOI: 10.1063/5.0017738 Fatigue ...The OPTOFEM school on Optically Controlled Ferroelectric Memristors goes Online and will be held on 22-23 Oct! Register now!
... Universität Darmstadt, Germany Organizers Josep Fontcuberta and Ignasi Fina Chairs of OPTOFEM 2020 Laboratory of Multifunctional Oxides and Complex Structures (MULFOX) For additional information ...New COVER in Materials Horizons for the article "Local manipulation of metamagnetism by strain nanopatterning
The Materials Horizons journal, from the Royal Society of Chemistry (RSC) ,features in its FRONT COVER the recently published article "Local manipulation of metamagnetism by strain nanopatterning" by Ignasi ...Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
... Devices Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta. Adv. Funct. Mater.2020, 2002638. DOI: 10.1002/adfm.202002638 Blocking of Conducting Channels ...Local manipulation of metamagnetism by strain nanopatterning
... Carles Gómez-Olivella, Daniel Esqué de los Ojos, Oriol Vallcorba, Carlos Frontera, Lucia Aballe, Josep Nogués, Jordi Sort* and Ignasi Fina * Mater. Horiz., 2020, Advance Article. DOI:10.1039/D0MH00601G ...25 students at the first "Bojos per la Física" online session at ICMA
... Fina and Marc Font from the MULFOX group (Laboratory of Multifunctional Thin Films and Complex Structures). Figure: Jordi Faraudo, Anna May Masnou and Ignasi Fina during the online session of "Bojos ...High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films
... between polarization, endurance and retention exists. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films Jike Lyu, Tingfeng Song, Ignasi Fina and Florencio Sanchez. Nanoscale, ...Nanoneedles to increase the capacity and robustness of digital memories
... simple," explains Ignasi Fina, researcher at the Institute of Materials Science of Barcelona (ICMAB-CSIC), "in phase transitions, everything you do to the material has a great impact on the other properties. ...Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
... F. Chisholm, Matthew F. Chisholm, Ignasi Fina, Florencio Sánchez*. Cryst. Growth Des. 2020. Publication Date: April 20, 2020. DOI: 10.1021/acs.cgd.0c00095 Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) ...Multifunctional Thin Films and Complex Structures
... Ferran Macià Visitor Researcher Ignasi Fina Ramon y Cajal researcher Research Lines Advanced Optical Imaging ...Mourning James Scott, the father of integrated ferroelectrics
... relevant for applications.” - Ignasi Fina "His talented scientific intuition and knowledge pioneered the use of ferroelectric materials as memory elements, and led to the most recent advances in the field ...New flexible, robust and secure tapes for information storage in wearable devices
... moments, can be used to store information, following certain protocols, providing greater security than ferromagnets", explains Ignasi Fina, ICMAB researcher and first author of the article. The iron-rhodium ...Three innovative LLAVOR projects awarded to the ICMAB!
... Security magnetic MEMory device (ISMEM)” by Josep Fontcuberta and Ignasi Fina The aim of the project is to develop new magnetic materials to store magnetic information with improved security, which could ...Flexible Antiferromagnetic FeRh Tapes as Memory Elements
Ignasi Fina*, Nico Dix, Enric Menéndez, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta*. ACS Appl. Mater. Interfaces 2020, XXXX, XXX, XXX-XXX. Publication ...15 % of the CSIC European patents applied in 2019 are from the ICMAB
... bendable recording device. Application date: 26 November 2019. The inventors are Josep Fontcuberta and Ignasi Fina, from the MULFOX group. IPR: CSIC. Mineral ice nucleation in sprays at high temperatures. ...Registration is now open for OPTOFEM2020: An ICMAB Summer School on OPTICALLY CONTROLLED FERROELECTRIC MEMRISTORS.
... Download here the OPTOFEM2020 flyer and pass it to your colleagues and friends! Organizers Josep Fontcuberta and Ignasi Fina Chairs of OPTOFEM2020 Laboratory of Multifunctional Oxides and Complex ...Books
... in Materials and Life Sciences Year: 2019 Edition: Wiley-VCH LINK Authors: Ignasi Fina, Xavi Martí Chapter 6: Spintronic Functionalities in Multiferroic Oxide-Based Heterostructures ...Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
Milena Cervo Sulzbach, Saúl Estandía, Xiao Long, Jike Lyu, Nico Dix, Jaume Gàzquez, Matthew F. Chisholm, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta. Adv. Electron. Mater.2019, 1900852. https://doi.org/10.1002/aelm.201900852 ...An article about "Ferroelectric Epitaxial Thin Films" highlighted in ACS "Focus on Europ
An article made 100 % in ICMAB (Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta and Florencio Sánchez) and published in ACS Appl. Electron. Mater. is highlighted in the "Focus on Europe: Advancing ...Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering
Sergio González-Casal, Ignasi Fina*, Florencio Sánchez, Josep Fontcuberta, ACS Appl. Electron. Mater. 2019191937-1944. Publication Date: September 2, 2019 https://doi.org/10.1021/acsaelm.9b00427 Achieving ...Disentangling Highly Asymmetric Magnetoelectric Effects in Engineered Multiferroic Heterostructures
Enric Menéndez, Veronica Sireus, Alberto Quintana, Ignasi Fina, Blai Casals, Rafael Cichelero, Mikko Kataja, Massimiliano Stengel, Gervasi Herranz, Gustau Catalán, Maria Dolors Baró, Santiago Suriñach, ...Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saul Estandía, Nico Dix, Jaume Gàzquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez. ACS Appl. Electron. Mater. 2019. Publication Date:July 3, 2019https://doi.org/10.1021/acsaelm.9b00256 ..."Local ferroelectric properties of free-standing single-crystal complex oxides" by Saidur R. Bakaul (Thurs, 11 July 2019
The Seminars and Training Committee kindly invites you to the following ICMAB Invited Seminar: Local ferroelectric properties of free-standing single-crystal complex oxides by Saidur R. Bakaul, Argonne ...The "Bojos per la Física" come to the ICMAB to discover piezoelectricity and molecular simulation
... in 2017 the initiative "Bojos per la Física" coordinated by the ICN2, and the IFAE. This year, Ignasi Fina and Jordi Faraudo were in charge of showing piezoelectricity and molecular simulation to the students. ...All you ever wanted to know about the present and future of oxide electronics, compiled in a roadmap
Mariona Coll and Josep Fontcuberta from the Institute of Materials Science of Barcelona (ICMAB-CSIC), Fabio Miletto Granozio from the CNR-SPIN (Complesso Universitario di Monte Sant’Angelo, Napoli, Italy) ...Welcome Stephen Filippone at ICMAB!
Hi!! I'm a PhD student at MIT in the Materials Science department. I am spending time here under the supervision of Ignasi Fina to characterize the low temperature dielectric properties of BaZrS3 and Ba3Zr2S7. ...Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
Mengdi Qian, Ignasi Fina,Florencio Sánchez, Josep Fontcuberta, Small, 10 February 2019 https://doi.org/10.1002/smll.201805042 In this study, we show how to write and read information stored in a ...Band Gap Tuning of Solution-Processed Ferroelectric Perovskite BiFe1–xCoxO3 Thin Films
Pamela Machado, Mateusz Scigaj, Jaume Gazquez, Estel Rueda, Antonio Sánchez-Díaz, Ignasi Fina, Martí Gibert-Roca, Teresa Puig, Xavier Obradors, Mariano Campoy-Quiles, and Mariona Coll*. Chem. Mater., 2019, 31 (3), ...Disclosing odd symmetry, strain driven magnetic response of Co on Pt/PMN-PT (011)
Michael Foerster, Ignasi Fina, Simone Finizio, Blai Casals, Ania Mandziak, Francois Fauth and Lucia Aballe. J. Phys.: Condens. Matter 31 084003 (2019) DOI: https://iopscience.iop.org/article/10.1088/1361-648X/aaf7ee ...Synergetic Electronic and Ionic Contributions to Electroresistance in Ferroelectric Capacitors
Mengdi Qian, Ignasi Fina, Milena Cervo Sulzbach, Florencio Sánchez, Josep Fontcuberta. Adv. Electron. Mater. 2019, 1800646. DOI: https://doi.org/10.1002/aelm.201800646 Advanced use of ferroelectric ...
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