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New flexible, robust and secure tapes for information storage in wearable devices
... The study is related to these other previous publications: Fina, J. Fontcuberta, Strain and voltage control of magnetic and electric properties of FeRh films. J. Phys. D: Appl. Phys.53, 023002 ...Articles 1992-2000
... (2000), pp. 8643-8646.B. Martínez, R. Senis, Ll. Balcells, V. Laukhin, J. Fontcuberta, L. Pinsard and A. Revcolevschi. High magnetic field study of lattice and magnetic effects on the charge-melting ...Articles 2006-2010
... MAGNETIC MATERIALS 26.- N. Dix, R. Muralidharan, B. Warot-Fonrose, M. Varela, F. Sánchez and J. Fontcuberta Critical limitations in the fabrication of biferroic BiFeO3-CoFe2O4 columnar nanocomposites ...Articles 2001-2005
... 36.- F. Sánchez, U. Lüders, G. Herranz, I.C. Infante, J. Fontcuberta, M.V. García- Cuenca, C. Ferrater and M. Varela Self-organization in complex oxide thin films: From 2D to 0D nanostructures of ...Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
J. Lyu, I. Fina, R. Bachelet, G. Saint-Girons, S. Estandía, J. Gázquez, J. Fontcuberta, and F. Sánchez. Appl. Phys. Lett. 114, 222901 (2019) https://doi.org/10.1063/1.5096002 SrTiO3 templates have ...Towards Oxide Electronics: a Roadmap
M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli, I. Fina, E. Fortunato, C. Frontera, S. Fujita, V. Garcia, ...All you ever wanted to know about the present and future of oxide electronics, compiled in a roadmap
... in synthesis and characterization methods that can help us facing them? The authors from the ICMAB are in yellow: M. Coll, J. Fontcuberta, I. Fina, C. Frontera, G. Herranz, F. Sánchez. What can ...Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
M. Qian, I. Fina, F. Sánchez, J. Fontcuberta, Adv. Electron. Mater. 2018, 1800407. https://doi.org/10.1002/aelm.201800407 The resistive switching associated with polarization reversal is studied in ...Six highlights with the participation of ICMAB researchers in the ALBA Synchrotron Activity Report 2017
... in martensitic FeRh alloy. ACS applied materials & interfaces 9 (18), 15577-15582 (2017) I. Fina, A. Quintana, J. Padilla-Pantoja, X. Martí, F. Macià, F. Sánchez, M. Foerster, L. Aballe, J. Fontcuberta, ...Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
J. Lyu, I. Fina, R. Solanas, J. Fontcuberta, and F. Sánchez. Appl. Phys. Lett. 113, 082902 (2018) DOI: 10.1063/1.5041715 This study is the first on ferroelectric hafnium oxide published by the MULFOX ...Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic
... S. Salahuddin, N. Kioussis, J. Fontcuberta, X. Marti & R. Ramesh. Scientific Reports 7, Article number: 15460 (2017). doi:10.1038/s41598-017-13760-y The ability to control a magnetic phase with ...Hiding and revealing magnetic information at room temperature
... that's when hiding information becomes a necessity. Following this idea, ICMAB researchers (I. Fina; C. Frontera; F. Sanchez & J. Fontcuberta), in collaboration with researchers from Berkeley Lab (CA, ...Competition between Polar and Nonpolar Lattice Distortions in Oxide Quantum Wells: New Critical Thickness at Polar Interfaces
J. Gazquez, M. Stengel, R. Mishra, M. Scigaj, M. Varela, M. A. Roldan, J. Fontcuberta, F. Sánchez, and G. Herranz. Phys. Rev. Lett. 119, 106102 – Published 7 September 2017. DOI: https://doi.org/10.1103/PhysRevLett.119.106102 ...Evidence of a minority monoclinic LaNiO_sub2.5sub_ phase in lanthanum nickelate thin films
L. López-Conesa,* J. M. Rebled, D. Pesquera, N. Dix, F. Sánchez, G. Herranz, J. Fontcuberta, C. Magén, M. J. Casanove, S. Estradé and F. Peiró. Phys. Chem. Chem. Phys., 2017,19, 9137-9142. DOI:10.1039/C7CP00902J ...Multiple strain-induced phase transitions in LaNiO_sub3sub_ thin films
M. C. Weber, M. Guennou, N. Dix, D. Pesquera, F. Sánchez, G. Herranz, J. Fontcuberta, L. López-Conesa, S. Estradé, F. Peiró, Jorge Iñiguez, and J. Kreisel. Phys. Rev. B 94. DOI: http://dx.doi.org/10.1103/PhysRevB.94.014118 ...Absence of magnetic proximity effects in magnetoresistive Pt/CoFe_sub2sub_O_sub4sub_ hybrid interfaces
M. Valvidares, N. Dix, M. Isasa, K. Ollefs, F. Wilhelm, A. Rogalev, F. Sánchez, E. Pellegrin, A. Bedoya-Pinto, P. Gargiani, L. E. Hueso, F. Casanova, and J. Fontcuberta. Phys. Rev. B 93, 214415. DOI: Phys ...Unravelling and controlling hidden imprint fields in ferroelectric capacitors
Fanmao Liu, I. Fina, R. Bertacco, and J. Fontcuberta. Scientific Reports, 6, 25028 (2016). doi:10.1038/srep25028 Ferroelectric materials have a spontaneous polarization that can point along energetically ...Quantum wells at the LaAlO3/SrTiO3 interface with tunable electron states
D. Pesquera, M. Scigaj, P. Gargiani, A. Barla, J. Herrero-Martín, E. Pellegrin, S. M. Valvidares, J. Gázquez, M. Varela, N. Dix, J. Fontcuberta, F. Sánchez, and G. Herranz Phys. Rev. Lett. 113, 156802 ...Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”
I. Fina, X. Marti, D. Yi, J. Liu, J. H. Chu, C. Rayan-Serrao, S. Suresha, A. B. Shick, J. Zelezny, T. Jungwirth, J. Fontcuberta, R. Ramesh Nature Communications 5, Article number: 4671; doi:10.1038/ncomms5671 ...Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
P. de Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta and F. Sánchez. Appl. Phys. Lett. 105, 012401 (2014) DOI: dx.doi.org/10.1063/1.4887349 ...Electric control of magnetism at the Fe/BaTiO3 interface
G. Radaelli, D. Petti, E. Plekhanov, I. Fina, P. Torelli, B.R. Salles, M. Cantoni, C. Rinaldi, D. Gutiérrez, G. Panaccione, M. Varela, S. Picozzi, J. Fontcuberta & R. Bertacco; Nature Comm. 5, ...Magnetoreflectance: a new tool to measure electron-lattice coupling in oxides
J. M. Caicedo, J. Fontcuberta and G. Herranz. Physical Rev. B, 89, 045121 (2014) DOI: 10.1103/PhysRevB.89.045121 We report on the optical response of different magnetic oxides (manganites, ruthenates, ...Room-temperature antiferromagnetic memory resistor
X. Marti, I. Fina, C. Frontera, Jian Liu, P. Wadley, Q. He, R. J. Paull, J. D. Clarkson, J. Kudrnovský, I. Turek, J. Kuneš, D. Yi, J-H. Chu, C. T. Nelson, L. You, E. Arenholz, S. Salahuddin, J. ...Direct magnetoelectric effect in ferroelectric - ferromagnetic epitaxial heterostructures
I. Fina, N. Dix, J. M. Rebled, P. Gemeiner, X. Martí, F. Peiró, B. Dkhil, F. Sánchez, L. Fàbrega and J. Fontcuberta Published at : Nanoscale, 2013, 5, 8037–8044 | 8037 DOI: 10.1039/C3NR01011B ...Large out-of-plane ferroelectric polarization in flat epitaxial BaTiO3 on CoFe2O4 heterostructures
N. Dix, I. Fina, R. Bachelet, L. Fàbrega, C. Kanamadi, J. Fontcuberta, and F. Sánchez Appl. Phys. Lett. 102, 172907 (2013); DOI: http://dx.doi.org/10.1063/1.4803943 Engineering interfaces ...Ultra-flat BaTiO3 epitaxial films on Si(001) with large out-of-plane polarization
M. Scigaj, N. Dix, I. Fina, R. Bachelet, B. Warot-Fonrose, J. Fontcuberta, and F. Sánchez; Appl. Phys. Lett. 102, 112905 (2013) http://dx.doi.org/10.1063/1.4798246 Ferroelectric BaTiO3 is ...Strain tilts spins:
F. Jiménez-Villacorta, J. A. Gallastegui, I. Fina, X. Marti, and J. Fontcuberta Phys. Rev. B 86, 024420 (2012) URL:http://link.aps.org/doi/10.1103/PhysRevB.86.024420 DOI:10.1103/PhysRevB.86.024420 ...Premis rebuts per investigadors de l'ICMA
... Oxide Nanostructures and Heterostructures Epitaxial stabilization of e-Fe2O3 (00l) on SrTiO3 (111) M. Gich, J. Gazquez, V. Skumryev, M. Varela, J.C. Idrobo, M. Varela, S.Pennycook, J. Fontcuberta, A. Roig ...
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