SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
Microelectronic Engineering, 85 (4), (2008), pp. 704-709
143.- S. Pasternak, G. Aquilanti, S. Pascarelli, R. P ...
... e route to a high-k gate dielectric on 4H-SiC
Electrochemical and Solid-State Letters, 7 (12), (2004), pp. F93-F95
A. Pérez-Tomás, P. Godignon, J. Montserrat, J. Millán, N. Mestres, P. Vennegues and ...