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Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films
03 November 2020

Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films.

Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is not significant wake-up effect and endurance-retention dilemma. The persistent wake-up effect common to polycrystalline La-doped Hf0.5Zr0.5O2 films, is limited to a few cycles in epitaxial films. Despite fatigue, endurance in epitaxial La-doped films is more than 1010 cycles, and this good property is accompanied by excellent retention of more than 10 years. These results demonstrate that wake-up effect and endurance-retention dilemma are not intrinsic in La-doped Hf0.5Zr0.5O2.

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Oxides for new-generation electronics

Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films


Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Raul Solanas, Ignasi Fina, and Florencio Sanchez

ACS Appl. Electron. Mater. 2020
Publication DateSeptember 14, 2020
https://doi.org/10.1021/acsaelm.0c00560

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