P. de Coux, R. Bachelet, B. Warot-Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta and F. Sánchez.
Appl. Phys. Lett. 105, 012401 (2014)
DOI: dx.doi.org/10.1063/1.4887349
A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate thatferromagnetic CoFe2O4films can be grown epitaxially on Si(111) using a Y2O3buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4filmspresent high crystal quality and high saturation magnetization.
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