Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

2014-07-15 13-12-36

P. de CouxR. BacheletB. Warot-FonroseV. SkumryevL. LupinaG. NiuT. SchroederJ. Fontcuberta and F. Sánchez
Appl. Phys. Lett. 105, 012401 (2014)

DOI: dx.doi.org/10.1063/1.4887349

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate thatferromagnetic CoFe2O4films can be grown epitaxially on Si(111) using a Y2O3buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4filmspresent high crystal quality and high saturation magnetization.

Oxides for new-generation electronics

  • Hits: 6745

INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA, Copyright © 2020 ICMAB-CSIC | Privacy Policy | This email address is being protected from spambots. You need JavaScript enabled to view it.