DOI: dx.doi.org/10.1063/1.4887349

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate thatferromagnetic CoFe2O4films can be grown epitaxially on Si(111) using a Y2O3buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4filmspresent high crystal quality and high saturation magnetization.