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27 July 2014

2014-07-15 13-12-36

P. de CouxR. BacheletB. Warot-FonroseV. SkumryevL. LupinaG. NiuT. SchroederJ. Fontcuberta and F. Sánchez
Appl. Phys. Lett. 105, 012401 (2014)


A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate thatferromagnetic CoFe2O4films can be grown epitaxially on Si(111) using a Y2O3buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4filmspresent high crystal quality and high saturation magnetization.

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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces