Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temperature and pressure, and retention is short if low temperature is used. The growth window of epitaxial stabilization of ferroelectric Hf_0.5Zr_0.5O₂ is narrower when all major ferroelectric properties (remanence, endurance, and retention) are considered, but deposition temperature and pressure ranges are still sufficiently wide.

Fatigue and retention in the growth window of ferroelectric Hf_0.5Zr_0.5O₂ thin filmsFatigue and retention in the growth window of ferroelectric Hf_0.5Zr_0.5O₂ thin films
Jike Lyu, Ignasi Fina, and Florencio Sánchez. 
Appl. Phys. Lett. 117, 072901 (2020)
DOI: 10.1063/5.0017738

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films