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31 July 2013



N. Dix, I. Fina, R. Bachelet, L. Fàbrega, C. Kanamadi, J. Fontcuberta, and F. Sánchez
Appl. Phys. Lett. 102, 172907 (2013);
Engineering interfaces in perovskite/spinel heterostructures is challenged by structural differences. We have used kinetic growth limitations to fabricate flat BaTiO3/CoFe2O4 (BTO/CFO) epitaxial bilayers on La2/3Sr1/3MnO3/SrTiO3(001). In situ analysis of lattice strain during growth has revealed that BTO grows relaxed on highly lattice-mismatched CFO, thus suppressing tensile epitaxial stress effects. As a result, BTO is ferroelectric along the out-of-plane direction with bulk-like polarization. These results show that very high lattice mismatch in heteroepitaxy can be an opportunity rather than a limitation to integrate dissimilar materials with optimized functional properties.



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Oxides for new-generation electronics

Large out-of-plane ferroelectric polarization in flat epitaxial BaTiO3 on CoFe2O4 heterostructures