Abstract:
Complex-oxide heterostructures are a leading example of quantum-matter heterostructures that open a new arena of solid-state physics. For the scientific development of this field and for a range of potential applications, the growth of high-purity heterostructures is required. We have developed a new thin-film deposition technique that is especially suited to the growth of oxide heterostructures with atomic precision. Thermal laser epitaxy uses chemical elements as sources which are evaporated with continuous-wave lasers. The lasers’ virtually arbitrary power density allows for the evaporation of almost all elements of the periodic table in the same setup. This is demonstrated by showing elemental metal films of a large range of elements; from high-vapour-pressure elements like S and Bi to low-vapour-pressure elements like W and Ta.
I will discuss the benefits of thermal laser epitaxy for high-purity deposition of complex-oxide materials and heterostructures with almost all elements from the periodic table. Furthermore, I will present results of a new substrate heater that is based on a ~10 µm laser. This laser light is directly absorbed by oxide crystals and therefore allows for a heating system that is ultra-clean, has very fast ramp rates and can reach extremely high temperatures.
Bio:
Hans Boschker studied applied physics at the University of Twente. He graduated in 2006, working on superconducting electronic devices under the supervision of Prof. Hilgenkamp. For his PhD thesis, he worked on the conducting LaAlO3/SrTiO3 interface, La0.67Sr0.33MnO3 thin films, La0.67Sr0.33MnO3 magnetocrystalline anisotropy and La0.67Sr0.33MnO3/SrTiO3 interfaces under the supervision of Prof. Rijnders and Prof. Blank at the University of Twente. He graduated Cum Laude in 2011. From 2011 to 2019, he worked as a scientist at the Max Planck Institute for Solid State Research in Stuttgart in the group of Prof. Mannhart, focusing on oxide device physics.
Research highlights are the observation and study of the superconducting gap of the LaAlO3/SrTiO3 interface, the development of integrated circuits and nanoscale transistors using the LaAlO3/SrTiO3 interface, and the discovery of a conducting and magnetic electron system in atomically thin SrRuO3. He presently works at the Max Planck Institute for Solid State Research as a project manager on the development of thermal laser epitaxy.
Hosted by Gervasi Herranz, MULFOX group, ICMAB-CSIC
Register here to attend by Zoom.
