Oxides for new-generation electronics

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices

Written on 21 July 2020.

Electroresistance is the functional property of resistive switching devices exploited in data storage and computing.

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Siesta: Recent developments and applications

Written on 07 July 2020.

A review of the present status, recent enhancements, and applicability of the Siesta program is presented. Since its debut in the mid-1990s, Siesta’s flexibility, efficiency, and free distribution have given advanced materials simulation capabilities to many groups worldwide.

Oxides for new-generation electronics

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Weak localization competes with the quantum oscillations in a natural electronic superlattice: The case of Na1.5(PO2)4(WO3)20

Written on 03 July 2020.

We report an investigation of the combined structural and electronic properties of the bronze ${Na}_{1.5} {({PO}_{2})}_{4} {({WO}_{3})}_{20}$ .

Oxides for new-generation electronics

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Photoinduced persistent electron accumulation and depletion in LaAlO3/SrTiO3 quantum wells

Written on 23 June 2020.

Spike-timing dependent plasticity (STDP) is a fundamental concept in neurobiology. Briefly, the relative timing of two neuron spikes reinforces or weakens the synapse between them, so that events caused by another should trigger spikes in a particular time order.

Oxides for new-generation electronics

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Local manipulation of metamagnetism by strain nanopatterning

Written on 19 June 2020.

Near any phase transition order parameters of materials are strongly coupled to materials’ properties. Metamagnetic materials show phase transition between two magnetically ordered phases.

Cover, Oxides for new-generation electronics

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High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Written on 05 June 2020.

Ferroelectric HfO₂ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists.

Oxides for new-generation electronics

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Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Written on 22 May 2020.

Epitaxial ferroelectric HfO₂ films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf_0.5Zr_0.5O₂(111) films were epitaxially stabilized on La_2/3Sr_1/3MnO₃(001) electrodes.

Oxides for new-generation electronics

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Nanoscale rotational dynamics of four independent rotators confined in crowded crystalline layers

Written on 12 May 2020.

We report a study where Car–Parrinello molecular dynamics simulations and variable-temperature (30–300 K) ¹H spin–lattice relaxation time experiments nicely complement each other.

Oxides for new-generation electronics

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In operando adjustable orbital polarization in LaNiO3 thin films

Written on 08 May 2020.

The different occupancy of electronic orbitals, the so-called orbital polarization, is a key parameter determining electric and magnetic properties of materials.

Oxides for new-generation electronics

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Strain control of the competition between metallic and semiconducting states in single-layers of TaSe3

Written on 01 May 2020.

José Ángel Silva-Guillén and Enric Canadell. 2D Materials, Volume 7, Number 2.

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Flexible Antiferromagnetic FeRh Tapes as Memory Elements

Written on 28 April 2020.

Ignasi Fina*, Nico Dix, Enric Menéndez, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta*. ACS Appl. Mater. Interfaces 2020, XXXX, XXX, XXX-XXX. Publication Date:March 9, 2020

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Generation and imaging of magnetoacoustic waves over millimeter distances

Written on 14 April 2020.

Blai Casals, Nahuel Statuto, Michael Foerster, Alberto Hernández-Mínguez, Rafael Cichelero, Peter Manshausen, Ania Mandziak, Lucía Aballe, Joan Manel Hernàndez, and Ferran Macià. Phys. Rev. Lett.

Oxides for new-generation electronics

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Structural, magnetic and electronic properties of EuTi0.5W0.5O3-xNx perovskite oxynitrides

Written on 10 April 2020.

Judith Oró-Solé, Carlos Frontera, Ashley P. Black, Augustin Castets, Karen L.Velásquez-Méndez, Josep Fontcuberta, Amparo Fuertes. Journal of Solid State Chemistry Volume 286, June 2020, 121274.

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Magneto-ionic control of magnetism in two-oxide nanocomposite thin films comprising mesoporous cobalt ferrite conformally nanocoated with HfO2

Written on 24 March 2020.

Shauna Robbennolt,* Pengmei Yu, Aliona Nicolenco, Pau Mercier Fernandez, Mariona Coll and Jordi Sort. Nanoscale, 2020, Advance Article.

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Nitride tuning of transition metal perovskites

Written on 06 March 2020.

Amparo Fuertes. APL Materials 8, 020903 (2020);

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Atomistic simulations of COSAN: amphiphiles without a Head‐and‐Tail design have a “head and tail” surfactant behavior

Written on 04 February 2020.

David C Malaspina, Clara Viñas, Francesc Teixidor, Jordi Faraudo. Angew. Chem. Int. Ed.. Accepted Author Manuscript.

Oxides for new-generation electronics

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Electric-field-induced avalanches and glassiness of mobile ferroelastic twin domains in cryogenic SrTi O 3

Written on 28 January 2020.

Blai Casals, Sebastiaan van Dijken, Gervasi Herranz, and Ekhard K. H. Salje. Phys. Rev. Research 1, 032025(R) – Published 26 November 2019.

Oxides for new-generation electronics

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Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

Written on 17 January 2020.

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long, Jike Lyu, Nico Dix, Jaume Gàzquez, Matthew F. Chisholm, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta. Adv. Electron. Mater.2019, 1900852.

Oxides for new-generation electronics

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Rotational polarization nanotopologies in BaTiO3/SrTiO3 superlattices

Written on 07 January 2020.

Saúl Estandía, Florencio Sánchez,* Matthew F. Chisholm and Jaume Gázquez. Nanoscale, 2019, Advance Article.

Oxides for new-generation electronics

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Chiral EDT-TTF precursors with one stereogenic centre: substituent size modulation of the conducting properties in the (R-EDT-TTF)2PF6 (R = Me or Et) series

Written on 27 December 2019.

Nabil Mroweh, Pascale Auban-Senzier, Nicolas Vanthuyne, Enric Canadell and Narcis Avarvari*. J. Mater. Chem. C, 2019,7, 12664-12673.

Oxides for new-generation electronics

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Double-cell superstructure and vacancy ordering in tensile-strained metallic thin films of Pr0.50Ca0.50 CoO 3 on LaAlO3

Written on 24 December 2019.

Jessica Padilla-Pantoja, Xavier Torrelles, Jaume Gazquez, Juan Rubio-Zuazo, Javier Blasco, Javier Herrero-Martín, and Jose Luis García-Muñoz. Phys. Rev. Materials 3, 104407.

Oxides for new-generation electronics

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Surface charged species and electrochemistry of ferroelectric thin films

Written on 29 November 2019.

Neus Domingo, Iaroslav Gaponenko, Kumara Cordero-Edwards, Nicolas Stucki, Virginia Pérez-Dieste, Carlos Escudero, Elzbieta Pach, Albert Verdaguer and Patrycja Paruch. Nanoscale, 2019,11, 17920-17930.

Oxides for new-generation electronics

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Organic Free Radicals as Circularly Polarized Luminescence Emitters

Written on 15 November 2019.

Mayorga Burrezo, P. , Jiménez, V. G., Blasi, D. , Ratera, I. , Campaña, A. G. and Veciana, J. (2019), Angew. Chem. Int. Ed.

Oxides for new-generation electronics

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Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

Written on 07 November 2019.

Sergio González-Casal, Ignasi Fina*, Florencio Sánchez, Josep Fontcuberta, ACS Appl. Electron. Mater. 2019191937-1944. Publication Date: September 2, 2019

Oxides for new-generation electronics

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Trapping and electrical characterization of single core/shell iron-based nanoparticles in self-aligned nanogaps

Written on 29 October 2019.

Jacqueline Labra-Muñoz,Zorica Konstantinović, Lluis Balcells, Alberto Pomar, Herre S. J. van der Zant, and Diana Dulić. Appl. Phys. Lett. 115, 063104 (2019);

Oxides for new-generation electronics

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Resistive Switching in Semimetallic SrIrO3 Thin Films

Written on 24 October 2019.

Víctor Fuentes, Borislav Vasić, Zorica Konstantinović, Benjamín Martínez, Lluís Balcells, Alberto Pomar*. ACS Appl. Electron. Mater.2019.

Oxides for new-generation electronics

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Spin ordering and physical properties of NaPrFeWO6 and NaSmFeWO6 with polar double perovskite structure

Written on 21 October 2019.

J. Blasco, J. A. Rodríguez-Velamazán, G. Subías, J. L. García-Muñoz, J. Stankiewicz, J. García. Acta Materialia Volume 176, 1 September 2019, Pages 53-62.

Oxides for new-generation electronics

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Spontaneous in-flight assembly of magnetic nanoparticles into macroscopic chains

Written on 18 October 2019.

Lluis Balcells, Igor Stanković,* Zorica Konstantinović, Aanchal Alagh, Victor Fuentes, Laura López-Mir, Judit Oró, Narcis Mestres, Carlos García, Alberto Pomar and Benjamin Martínez. Nanoscale, 2019,11, 14194-14202.

Cover, Oxides for new-generation electronics

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2D Molecular Superconductor to Insulator Transition in the β′′-(BEDT-TTF)2[(H2O)(NH4)2M(C2O4)3]·18-crown-6 Series (M = Rh, Cr, Ru, Ir)

Written on 08 October 2019.

Alexander L. Morritt, Jordan R. Lopez ,Toby J. Blundell, Enric Canadell, Hiroki Akutsu, Yasuhiro Nakazawa, Shusaku Imajo, Lee Martin*. Inorg. Chem.2019581610656-10664. Publication Date:August 5, 2019

Oxides for new-generation electronics

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Tailoring the crystal growth of quartz on silicon for patterning epitaxial piezoelectric films

Written on 04 October 2019.

Qianzhe Zhang, David Sánchez-Fuentes, Andrés Gómez, Rudy Desgarceaux, Benoit Charlot, Jaume Gàzquez, Adrián Carretero-Genevrier* and Martí Gich*. Nanoscale Adv., 2019, Advance Article

Oxides for new-generation electronics

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Phonon transport across crystal-phase interfaces and twin boundaries in semiconducting nanowires

Written on 01 October 2019.

Jesús Carrete, Miquel López-Suárez, Martí Raya-Moreno, Anton S. Bochkarev, Miquel Royo, Georg K. H. Madsen, Xavier Cartoixà, Natalio Mingod and Riccardo Rurali*. Nanoscale, 2019,11, 16007-16016

Oxides for new-generation electronics

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On the Sensing Mechanisms of a Hydroresistive Flexible Film Based on an Organic Molecular Metal

Written on 25 September 2019.

Raphael Pfattner*, Elena Laukhina*, Laura Ferlauto, Laura Ferlauto, Fabiola Liscio, Silvia Milita, Anna Crespi, Victor Lebedev, Marta Mas-Torrent, Vladimir Laukhin, Concepció Rovira, Jaume Veciana*. ACS Appl. Electron. Mater.2019XXXXXXXXXX-XXX. Publication Date:August 7, 2019

Oxides for new-generation electronics

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Disentangling Highly Asymmetric Magnetoelectric Effects in Engineered Multiferroic Heterostructures

Written on 10 September 2019.

Enric Menéndez, Veronica Sireus, Alberto Quintana, Ignasi Fina, Blai Casals, Rafael Cichelero, Mikko Kataja, Massimiliano Stengel, Gervasi Herranz, Gustau Catalán, Maria Dolors Baró, Santiago Suriñach, and Jordi Sort. Phys. Rev. Applied 12, 014041 – Published 23 July 2019.

Oxides for new-generation electronics

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Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO3 Thin Films by Substrate Mismatch

Written on 03 September 2019.

Mathieu Mirjolet, Hari Babu Vasili, LLuís López‐Conesa, Sònia Estradé, Francesca Peiró, José Santiso, Florencio Sánchez, Pamela Machado, Pierluigi Gargiani, Manuel Valvidares, Josep FontcubertaAdv. Funct. Mater. 2019, 1904238.

Oxides for new-generation electronics

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Face dependent footprints of carpet-like graphene films grown on polycrystalline silicon carbide

Written on 30 August 2019.

C. Ramírez, E. García. E. Barrena, A. De Pablos, M. Belmonte, M.I. Osendi, P. Miranzo, C. Ocal. Carbon, Volume 153, November 2019, Pages 417-427.

Oxides for new-generation electronics

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On the Role of Interfaces on Spin Transport in Magnetic Insulator/Normal Metal Heterostructures

Written on 20 August 2019.

Fontcuberta, J., Vasili, H. B., Gàzquez, J., Casanova, F., Adv. Mater. Interfaces 2019, 1900475.

Oxides for new-generation electronics

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Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Written on 13 August 2019.

Saul Estandía, Nico Dix, Jaume Gàzquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez. ACS Appl. Electron. Mater. 2019.

Oxides for new-generation electronics

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Electronic and structural reconstructions of the polar (111) SrTiO3 surface

Written on 06 August 2019.

X. Torrelles, G. Cantele, G. M. De Luca, R. Di Capua, J. Drnec, R. Felici, D. Ninno, G. Herranz, and M. Salluzzo. Phys. Rev. B 99, 205421.

Oxides for new-generation electronics

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Phonon Engineering in Twinning Superlattice Nanowires

Written on 26 July 2019.

Marta De Luca, Claudia Fasolato, Marcel A. Verheijen, Yizhen Ren, Milo Y. Swinkels, Sebastian Kölling, Erik P.A.M. Bakkers, Riccardo Rurali*, Xavier Cartoixà, Ilaria Zardo*. Nano Lett.2019. 2019.

Oxides for new-generation electronics

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Magnetic inversion symmetry breaking and spin reorientation in Tb2MnNiO6: A polar strong ferromagnet

Written on 19 July 2019.

Jose Luis García-Muñoz, Javier Blasco, Xiaodong Zhang, and Oscar Fabelo. Phys. Rev. B 99, 184444 – Published 29 May 2019.

Oxides for new-generation electronics

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