SCIENTIFIC HIGHLIGHTS

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
16 November 2021
Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue in epitaxial Hf0.5Zr0.5O2 (HZO) instead of polycrystalline samples. Using different substrates, the relative amount of orthorhombic (ferroelectric) and monoclinic (paraelectric) phases is controlled. Epitaxial HZO films almost free of parasitic monoclinic phase suffer severe fatigue. In contrast, fatigue is mitigated in films with a greater amount of paraelectric phase.
This suggests that fatigue can be intrinsically pronounced in ferroelectric HZO. It is argued that the enhancement of endurance in films showing coexisting phases results from the suppression of pinned domain propagation at ferroelectric–paraelectric grain boundaries, in contrast with a rapid increase of the size of the pinned domains in single ferroelectric regions.
Hits: 1151
Oxides for new-generation electronics

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance


Tingfeng Song, Saúl Estandía, Huan Tan, Nico Dix, Jaume Gàzquez, Ignasi Fina, Florencio Sánchez,

Adv. Electron. Mater. 2021, 2100420. 
DOI: https://doi.org/10.1002/aelm.202100420

INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA, Copyright © 2020 ICMAB-CSIC | Privacy Policy | This email address is being protected from spambots. You need JavaScript enabled to view it.