Quantum wells at the LaAlO3/SrTiO3 interface with tunable electron states


D. Pesquera, M. Scigaj, P. Gargiani, A. Barla, J. Herrero-Martín, E. Pellegrin, S. M. Valvidares, J. Gázquez, M. Varela, N. Dix, J. Fontcuberta, F. Sánchez, and G. Herranz

Phys. Rev. Lett. 113, 156802 (2014)

DOI: http://dx.doi.org/10.1103/PhysRevLett.113.156802

Quantum wells with d-electrons at the LaAlO3(LAO)/SrTiO3(STO) interface exhibit physical properties, such as superconductivity or magnetism, unseen in conventional semiconductors (Si, Ge, GaAs, …). We have demonstrated that the symmetry of the conduction band inside the QWs can be selected at whish. This opens up novel perspectives to manipulate the electronic properties of QWs at the LAO/STO interface.


Oxides for new-generation electronics

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