Early detection of diabetes, a worldwide health issue, is key for its successful treatment. Acetone is a marker of diabetes, and efficient, non-invasive detection can be achieved with the use of nanotechnology. In this paper we investigate the effect of acetone adsorption on the electronic properties of silicon nanowires (SiNWs) by means of density functional theory.
We considered hydrogenated SiNWs grown along the [1 1 1] bulk Si axis, with group-III impurities (B, Al, Ga), for which both surface substitutional doping and functionalizing schemes are considered. We present an analysis of the adsorption configuration, energetics, and electronic properties of the undoped and doped SiNWs. Upon acetone adsorption, the SiNW without impurities becomes an n-type semiconductor, while most substituted/functionalized cases have their HOMO-LUMO gap tuned, which could be harnessed in optical sensors. Acetone is always chemisorbed, although for the case without impurities, and the Al- and Ga-functionalization schemes, the chemisorption is very weak. These nanostructures could be used for acetone capture and detection, which could lead to applications in the medical treatment of diabetes.
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Oxides for new-generation electronics
Silicon nanowires as acetone-adsorptive media for diabetes diagnosis
Francisco De Santiago, José Eduardo Santana, Álvaro Miranda, Luis Antonio Pérez, Riccardo Rurali, Miguel Cruz-Irissona
We report the synthesis and theoretical study of two new colorimetric chemosensors with special selectivity and sensitivity to Ni2+ and Cu2+ ions over other metal cations in the CH3CN/H2O solution. Compounds (E)-4-((2-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (A) and (E)-4-((3-nitrophenyl)diazenyl)-N,N-bis(pyridin-2-ylmethyl)aniline (B) exhibited a drastic color change from yellow to colorless, which allows the detection of the mentioned metal cations through different techniques.
The development of advanced piezoelectric α‐quartz microelectromechanical system (MEMS) for sensing and precise frequency control applications requires the nanostructuration and on‐chip integration of this material on silicon material.
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared.
Though first order transitions are thought to be abrupt, materials find cunning ways to smooth the jump. Here we show that VO2 chooses making beautiful tapestries at the atomic scale. To see how, and how they affect its intriguing metal-insulator transition, continue reading:
The growth of epitaxial complex oxides has been essentially limited to specific substrates that can induce epitaxial growth and stand high temperature thermal treatments. These restrictions hinder the opportunity to manipulate and integrate such materials into new artificial heterostructures including the use of polymeric and silicon substrates and study emergent phenomena for novel applications.