Greta Radaelli,* Diego Gutiérrez, Mengdi Qian, Ignasi Fina, Florencio Sánchez, Lorenzo Baldrati, Jakoba Heidler, Cinthia Piamonteze, Riccardo Bertacco, Josep Fontcuberta*. Adv. Elec. Materials 22nd Nov. 2016, DOI: 10.1002/aelm.201600368
In ferroelectric BaTiO3 tunnel junctions, integrating tensile strained slave La0.5Sr0.5MnO3 (HD) layers, polarization reversal promotes an orbital-reordering and a concomitant metal–insulator transition in the HD layer that largely enhances the electroresistance of the junctions. Radically different results are obtained under compressive strain.
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Oxides for new-generation electronics
Strain-Controlled Responsiveness of Slave Half-Doped Manganite La_sub0.5sub_Sr_sub0.5sub_MnO_sub3sub_ Layers Inserted in BaTiO_sub3sub_ Ferroelectric Tunnel Junctions
