SCIENTIFIC HIGHLIGHTS

27 November 2015

 


 

The amount of structural strain in pulsed laser deposited LaMnO3 thin films is controlled by modifying the nominal oxygen pressure during growth. Bulklike antiferromagnetic films are obtained when reducing conditions lead to partially relaxed films. On the other hand, under oxidizing conditions, fully strained films exhibit ferromagnetic insulating behavior related to strain-induced orbital ordering.

 

 

 

 

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Oxides for new-generation electronics

Strain-Engineered Ferromagnetism in LaMnO_sub3sub_ Thin Films




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