Oxides for new-generation electronics

Strain-Engineered Ferromagnetism in LaMnO_sub3sub_ Thin Films

27 November 2015

cg 2015 008843 0006

Jaume RoquetaAlberto Pomar*Lluis BalcellsCarlos FronteraSergio ValenciaRadu AbrudanBernat BozzoZorica KonstantinovićJosé Santiso, and Benjamín Martínez;  
Cryst. Growth Des., 2015, 15 (11), pp 5332–5337;  
DOI: 10.1021/acs.cgd.5b00884



The amount of structural strain in pulsed laser deposited LaMnO3 thin films is controlled by modifying the nominal oxygen pressure during growth. Bulklike antiferromagnetic films are obtained when reducing conditions lead to partially relaxed films. On the other hand, under oxidizing conditions, fully strained films exhibit ferromagnetic insulating behavior related to strain-induced orbital ordering.





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