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SCIENTIFIC HIGHLIGHTS

16 January 2014

http://dx.doi.org/10.1063/1.4861471

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dotmorphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments underhydrostatic pressure strongly support the theoretical conclusions.

 

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Oxides for new-generation electronics

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots