The discovery of a substantial short circuit photocurrent density (J_sc) in ferroelectric BiFeO₃ (BFO)^1,2 was a hallmark that stimulated revisiting the photoresponse of narrow gap polar materials. In conventional semiconductor photovoltaic devices, electron–hole pairs created by photon absorption are extracted by an internal electric field (E_in) present at device interfaces and/or by diffusion, and the resulting open circuit photovoltage (V_oc) is limited by the energy gap.³ In recent years, attention is driven toward the so-called bulk photovoltaic effect (BPE), occurring in non-centrosymmetric materials, whose distinctive features are: the J_sc flows in the absence of any E_in, the V_oc is not bounded by E_g, and the J_sc is sensitive to the polarization direction of the incoming light.⁴ Indeed, although in BFO, V_oc was observed to be larger than the bandgap and first attributed to domain walls,⁵ subsequent experiments and the angular dependence of J_sc allowed to assess its BPE origin⁶ with amplitudes (Glass coefficients) that turned out to be in reasonable agreement with first principles calculations,⁷ although the detailed microscopic mechanisms of the observed photocurrent remain unsolved.^8,9