The discovery of a substantial short circuit photocurrent density (Jsc) in ferroelectric BiFeO3 (BFO)1,2 was a hallmark that stimulated revisiting the photoresponse of narrow gap polar materials. In conventional semiconductor photovoltaic devices, electron–hole pairs created by photon absorption are extracted by an internal electric field (Ein) present at device interfaces and/or by diffusion, and the resulting open circuit photovoltage (Voc) is limited by the energy gap.3 In recent years, attention is driven toward the so-called bulk photovoltaic effect (BPE), occurring in non-centrosymmetric materials, whose distinctive features are: the Jsc flows in the absence of any Ein, the Voc is not bounded by Eg, and the Jsc is sensitive to the polarization direction of the incoming light.4 Indeed, although in BFO, Voc was observed to be larger than the bandgap and first attributed to domain walls,5 subsequent experiments and the angular dependence of Jsc allowed to assess its BPE origin6 with amplitudes (Glass coefficients) that turned out to be in reasonable agreement with first principles calculations,7 although the detailed microscopic mechanisms of the observed photocurrent remain unsolved.8,9