The work at Argonne (J. W. Adkins and S. R. Bakaul were responsible for electronic transport experiments, data analysis, and contribution to manuscript writing) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. The use of the Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. J. T. Abiade acknowledges financial support from the U. S. National Science Foundation under Grant No. NSF-DMR-1508220. Financial support from the Spanish Ministerio de Ciencia e Innovación, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (No. SEV-2015-0496) and the Nos. MAT2017-85232-R (AEI/FEDER, EU), and MAT2015-73839-JIN projects, and from Generalitat de Catalunya (No. 2017 SGR 1377) is acknowledged. J. W. Adkins acknowledges the University of Illinois at Chicago's Pipeline to an Inclusive Faculty (PIF) Program. I. Fina acknowledges Ramón y Cajal Contract No. RYC-2017-22531.
Oxides for new-generation electronics
Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2
J. W. Adkins, I. Fina, F. Sánchez, S. R. Bakaul, and J. T. Abiade
Appl. Phys. Lett. 117, 142902 (2020)