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PhD Theses

Alejandro Fernández will defend his PhD Thesis on Monday, 4 April 2022, at 11 am at ICMAB

The PhD researcher Alejandro Fernández, from the Superconducting Materials and Large Scale Nanostructures (SUMAN) Group at ICMAB-CSIC, will defend his PhD thesis on Monday, 4 April 2022 at 11 am at ICMAB.

Anna May
28 March 2022
Banner PhD Thesis Defense by Alejandro Fernández
Banner PhD Thesis Defense by Alejandro Fernández

Field-Induced Reversible Tuning of Oxygen Doping in High-Temperature Superconductors

by Alejandro Fernández Rodrígez, from the Superconducting Materials and Large Scale Nanostructures (SUMAN) Group at ICMAB-CSIC

Date: Monday, 4 April 2022
Time: 11:00 am
Venue: ICMAB - Sala d'Actes Carles Miravitlles and online. Register here to attend by Zoom.

Abstract: Modulation of carrier concentration in strongly correlated oxides offers the opportunity to induce different phases in the same material, changing their physical properties. The possibility of reversibly modifying the metal-insulator transition in perovskite oxides, by means of an electric field, is a very active area of research.

We studied the electric manipulation of the metal (superconducting) to insulator transition in YBCO thin films by field-induced oxygen doping, demonstrating that non-volatile volume phase transitions can be locally modulated to fabricate transistor-like devices, with free-resistance channels. These devices work both at the superconducting and normal state, providing the basis for the design of room temperature multi-terminal memristive structures, promising for neuromorphic computing applications and emerging functional superconducting systems.


  • Anna Palau, SUMAN group, ICMAB-CSIC
  • Narcís Mestres, SUMAN group, ICMAB-CSIC

PhD Committee:

  • President: Lluís Balcells, ICMAB-CSIC
  • Secretary: Víctor Rouco, Universidad Complutense de Madrid (UCM)
  • Vocal: Mariela Andrea Menghini, Instituto IMDEA Nanociencia

University: Universitat Autònoma de Barcelona
PhD Programme: Materials Science Programme


Oxygen vacancy formation in a YBCO transistor-like device.


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