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An article about "Ferroelectric Epitaxial Thin Films" highlighted in ACS "Focus on Europe"


The article is:
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Jike Lyu, Ignasi Fina, Raul Solanas, Josep Fontcuberta, Florencio Sánchez*
ACS Appl. Electron. Mater. 2019, 1, 2, 220-228, 2019 doi.org/10.1021/acsaelm.8b00065
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the growth window (temperature and oxygen pressure during deposition and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to ∼24 μC/cm2, depends on the amount of orthorhombic phase and interplanar spacing and increases with temperature and pressure for a fixed film thickness.
The leakage current decreases with an increase in thickness or temperature, or when decreasing oxygen pressure. The coercive electric field (EC) depends on thickness (t) according to the EC – t–2/3 scaling, which is observed for the first time in ferroelectric hafnia, and the scaling extends to thicknesses down to around 5 nm. The proven ability to tailor the functional properties of high-quality epitaxial ferroelectric Hf0.5Zr0.5O2 films paves the way toward understanding their ferroelectric properties and prototyping devices.
Expanding your expertise
Collaboration across geographical divides vastly improves our ability to create, discover, and share tools for tackling the challenges facing our world. This special collection shines a light on materials science research from authors based in Europe*, drawn from our ACS Applied Materials & Interfaces journal portfolio.
If you see something that sparks your interest, why not reach out to the authors? It could lead to your next international collaboration.
*Articles with corresponding authors whose affiliated institution is in Europe as of December 2019.
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