Why did you choose the ICMAB?
I found the research programs of the ICMAB at Muchong website (a Chinese academic website). I was interested in my current research program about ferroelectrics on Silicon by Dr. Florencio Sanchez. I tried to apply and luckily had the opportunity to come to the ICMAB.
How would you explain your research to a non-scientific audience?
My research is focused on the epitaxial ferroelectric films on Si. One is straining tuning of ferroelectric BaTiO3 thin films on Si by controlling the self-formed point defects; another is exploring the growth window for polar ferroelectric orthorhombic phase in epitaxial HfO2 films and further integrating epitaxial HfO2 films on Si.
What are the main applications of your research? Could you give us an example?
Non-volatile memory devices, such as Ferroelectric Random Access Memory (FeRAM).
From the lessons learnt at ICMAB, which one do you value the most?
The lectures and workshops teaching technical skills and experimental devices.
What will you miss the most from ICMAB?
The pica-pica from the ICMAB Festival.
How do you think this experience will contribute to your training and to your future?
This PhD experience pushes me forward in the academic field. It shapes my academic skills and ability and teaches me how to think in a more comprehensive way.
What are your plans once you finish your PhD?
Most probably I will continue with Postdoc research.
What do you wish you had known at the beginning of your PhD?
It’s never too early to start writing your thesis.
Why did you become a scientist? Which have been your role models?
I like doing research. The discovery process of the mechanism behind every phenomenon is interesting and exciting.
Which is your favourite female scientist?
Describe in 3 keywords…
by Jike Lyu, Laboratory of Multifunctional Oxides and Complex Structures (MULFOX), ICMAB-CSIC
Date: Thursday, 12 September 2019
Time: 11 am
Venue: Sala d'actes Carles Miravitlles, ICMAB-CSIC
Abstract: This thesis investigated the epitaxial lead free ferroelectric films on Silicon. It consists of two major parts: firstly, different from the conventional substrate-based strain engineering, we developed a new strain method to tune the lattice strain and ferroelectric polarization of BaTiO3 films epitaxially integrated with silicon based on balancing the thermodynamics and kinetics through controlling the growth parameters; secondly, we determined the growth window by PLD for epitaxially stabilizing the polar orthorhombic phase in Hf0.5Zr0.5O2 films on STO(001).Further epitaxial growth of high quality Hf0.5Zr0.5O2 films has been successfully integrated on Si substrate in a capacitor heterostructure with different buffer layers presenting outstanding ferroelectric properties.