Plasmon-induced photocurrent generation in metal-semiconductor devices with nanofabricated inverted pyramid arrays
Jinhui Hu, Nanostructured Materials for Optoelectronics and Energy Harvesting (NANOPTO) group at ICMAB-CSIC
Date: Wednesday, 2 November 2022
Time: 2:30 pm
Venue: UAB, Facultat Ciències i Biociències, C1/070-1 Sala Graus
One of the main challenges in harvesting the near-infrared (NIR) region of the solar spectrum that is wasted by any solar cell, due to the limitation in bandgap that prevents photovoltaic generation, is to exploit alternative ways of photocurrent generation. In this thesis, Au/Si devices with nano-scale inverted-pyramids were fabricated via soft imprinting lithography exhibit remarkable responsivities both in the region above and below the Si bandgap. The concepts were extended to the fabrication of devices using polymeric materials such as the n-type organic semiconductor N2200 through “wet embossing”.
Remarkable photocurrent and responsivity that obtained in the spectral region above but close to the semiconductor bandgap down to the NIR renders the promising application of our structures and fabrication methods in areas such as infrared photodetection, photocatalysis, etc.
- Maria Isabel Alonso Carmona, NANOPTO group, ICMAB-CSIC
- Alejandro Rodolfo Goñi, NANOPTO group, ICMAB-CSIC
- President: Borja Sepúlveda Martínez, Institut de Microelectrònica de Barcelona (IMB-CNM-CSIC), Spain
- Secretary: Oriol Arteaga Barriel, Universitat de Barcelona, Spain
- Vocal: Juan Antonio Zapien Soto, City University of Hong Kong
University: Universitat Autònoma de Barcelona (UAB)
PhD Programme: Materials Science
Plasmon-induced photocurrent generation/thesis cover by Jinhui Hu | ICMAB, CSIC