Abstract:
The last few decades have seen significant scientific discoveries in single crystal complex oxide materials including colossal magnetic resistance, superconductivity, voltage control of magnetism and many different ferroic orders, many of which could lead to completely new applications. However, integration of such oxides using direct synthesis on microelectronics-platforms such as Si has faced significant challenge due to various growth related issues and the interface chemistry at high temperature. Therefore, the functionality and performance that are otherwise available for single-crystal, complex oxide materials have remained unachievable in microelectronic devices for long time [1].
The recent invention of layer transfer techniques (LTT) has opened a promising route to monolithic integration of these materials with arbitrary substrates [2,3,4] – thus offering a possible replacement to the rarely-successful direct growth techniques in terms of device fabrication [5].
In this talk, I will discuss about local ferroelectric properties of free-standing complex oxide films derived using LTT and the possibility of using them in microelectronic devices.
References:
[1] S. Manipatruni, D. E. Nikonov, I. A. Young, Nat. Phys. 2018, 14, 338.
[2] S. R. Bakaul et al., Adv. Mater. 2017, 29, 1605699.
[3] S. R. Bakaul et al., Nat. Commun. 2016, 7, 10547.
[4] D. Lu et al., Nat. Mater. 2016, 15, 1255.
[5] M. P. Warusawithana et al., Science 2009, 324, 367.
Hosted by Florencio Sánchez, Laboratory of Multifunctional thin films and complex structures (MULFOX)
