Photoresistance and electroresistance in ferroelectric tunnel junctions based on BaTiO3 and Hf0.5Zr0.5O2
Xiao Long, Multifunctional Thin Films and Complex Structures (MULFOX) group at ICMAB-CSIC
Date: Friday, 25 November 2022
Time: 11 AM
Venue: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) - Sala d'Actes MATGAS
Informational technology development is approaching a crucial bottleneck due to the limitation of Von-Neumann architecture, for data storage and logic functions. Meanwhile, nowadays the DRAM and NAND flash memories have shown drawbacks such as data volatility, limitations of speed and endurance problem. Newly emerging non-volatile memories (NVMs) have become prominent candidates for the upcoming era of artificial intelligence and neuromorphic computing.
One promising type of NVMs is the ferroelectric tunnel junction (FTJ), which has a simple capacitor structure, consisting of an ultrathin ferroelectric layer, allowing tunnel transport, sandwiched between two metallic electrodes.The switching of ferroelectric polarization between two directions (PDOWN and PUP) modulates the barrier properties at the interface with electrodes, which consequent changes of conductance, i.e. the tunnel electroresistance (ER) effect.
- Josep Fontcuberta, ICMAB-CSIC
- Ignasi Fina, Diamond Light Source
- President: Jordi Sort Viñas, Universitat Autònoma de Barcelona, Spain
- Secretary: Javier Tornos, Universidad Complutense de Madrid, Spain
- Vocal: Monica Burriel, Université Grenoble Alpes, France
University: Universitat Autònoma de Barcelona (UAB)
PhD Programme: Materials Science
Representative figure of the Thesis | Xiao Long, ICMAB-CSIC