ICMAB Research
07 July 2023
Harnessing a bis(selenomethyl)tetrathiafulvalene (TTF) derivative as a donor, conducting charge transfer (CT) salts are realized thanks to original packing structures supported by chalcogen bonding (ChB) interactions. Specifically, reaction of EDT-TTF(SeMe)2 (EDT = ethylenedithio) with an acceptor, 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F2TCNQ), afforded two polymorphs of 1
:
1 CT salts, α- and β-[EDT-TTF(SeMe)2](F2TCNQ). The donor and the acceptor molecules in both polymorphs organize into segregated and uniform stacks. Based on the structure, the α-salt shows a quasi-complete CT while the β-salt shows a partial CT with ρ ∼±0.8.
:
1 CT salts, α- and β-[EDT-TTF(SeMe)2](F2TCNQ). The donor and the acceptor molecules in both polymorphs organize into segregated and uniform stacks. Based on the structure, the α-salt shows a quasi-complete CT while the β-salt shows a partial CT with ρ ∼±0.8.The oxidation of TTF activates the σ-hole on Se atoms to be engaged in highly linear ChB interactions with the N atoms on F2TCNQ. The formation of directional ChB interactions resulted in original packing structures of the donor and the acceptor stacks that are distinct between α- and β-salts. In particular, the ChB motif observed in the β-salt allows F2TCNQ molecules within the stack to be closer than those in the α-salt. Consequently, the α-salt is a semi-conductor, while the β-salt shows metallic behaviour with a two-step metal-to-insulator (MI) transition. Moreover, the observed MI transition temperature in the β-salt (180 K) is substantially higher than that in other known CT salts, likely owing to the 3D coupling of the modulation in different chains brought about by the –SeMe substituents.
Hits: 1284
M4ELC Sustainable Electronics
Chalcogen bonding and variable charge transfer degree in two polymorphs of 1:1 conducting salts with segregated stacks
Maxime Beau, Olivier Jeannin, Marc Fourmigué *, Pascale Auban-Senzier, Claude Pasquier, Pere Alemany, Enric Canadell * and Ie-Rang Jeon
CrystEngComm, 2023, 25, 3189-3197
DOI: 10.1039/D3CE00260H


