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Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
26 April 2019

Mengdi Qian, Ignasi Fina,Florencio Sánchez, Josep Fontcuberta, Small, 10 February 2019

https://doi.org/10.1002/smll.201805042

In this study, we show how to write and read information stored in a resistive switching device, in a state having an identical large resistance. The two different logic states correspond to an UP-DOWN or DOWN-UP ferroelectric states in an anti-serial connection of two ferroelectric capacitors, having an identical series electrical resistance

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
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Oxides for new-generation electronics

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions