SCIENTIFIC HIGHLIGHTS

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
26 April 2019

Mengdi Qian, Ignasi Fina,Florencio Sánchez, Josep Fontcuberta, Small, 10 February 2019

https://doi.org/10.1002/smll.201805042

In this study, we show how to write and read information stored in a resistive switching device, in a state having an identical large resistance. The two different logic states correspond to an UP-DOWN or DOWN-UP ferroelectric states in an anti-serial connection of two ferroelectric capacitors, having an identical series electrical resistance

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions
Hits: 2101
Oxides for new-generation electronics

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions




INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA, Copyright © 2020 ICMAB-CSIC | Privacy Policy | This email address is being protected from spambots. You need JavaScript enabled to view it.