Topological insulators (TIs) have shown great promise for the development of energy-efficient and ultra-fast spintronic devices leveraging charge-spin interconversion (CSIC) mechanisms. Among them, chalcogenide-based TIs stand out for their compatibility with wafer-scale growth techniques. Recent studies have validated the topological properties of Sb₂Te₃ thin films grown via metal–organic chemical vapor deposition on 4-inch wafers. To advance Sb₂Te₃-based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin-orbit torque (SOT) and magnetoresistive responses in Sb₂Te₃/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb₂Te₃, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10⁶ . These findings underscore the potential of the Sb₂Te₃ TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.