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Impact of La concentration on ferroelectricity of La-doped HfO2 epitaxial thin films
01 February 2022

Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.

This article is part of the ACS Editors' Choice program 
(ACS Editors' Choice dateOctober 19, 2021)

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Impact of La concentration on ferroelectricity of La-doped HfO2 epitaxial thin films


Tingfeng Song, Huan Tan, Romain Bachelet, Guillaume Saint-Girons, Ignasi Fina*, and Florencio Sánchez*

ACS Appl. Electron. Mater. 2021, 3, 11, 4809–4816
Publication DateOctober 19, 2021
DOI: 10.1021/acsaelm.1c00672

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