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Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions
01 October 2021
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. Complementary metal oxide semiconductor-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ≈4–6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf0.5Zr0.5O2 (HZO) tunnel junctions in large area capacitors (≈300 μm2).
We observe that the resistance area product is reduced to about 160 and 65 Ω·cm2 for OFF and ON resistance states, respectively. These values are 2 orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210%). The devices show memristive and spike-timing-dependent plasticity behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change.
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Oxides for new-generation electronics

Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions


Milena Cervo Sulzbach, Huan Tan, Saúl Estandía, Jaume Gàzquez, Florencio Sánchez, Ignasi Fina*, and Josep Fontcuberta*

ACS Appl. Electron. Mater. 2021, 3, 8, 3657–3666
Publication Date:August 12, 2021
DOI: https://doi.org/10.1021/acsaelm.1c00604

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