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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
21 November 2023
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application.
Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.
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Oxides for new-generation electronics

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P. B. Silva ; Ruben Alcala ; Uygar E. Avci ; Nick Barrett ; Laura Bégon-Lours ; Mattias Borg ; Seungyong Byun ; Sou-Chi Chang ; Sang-Wook Cheong ; Duk-Hyun Choe ; Jean Coignus ; Veeresh Deshpande ; Athanasios Dimoulas ; Catherine Dubourdieu ; Ignasi Fina ; Hiroshi Funakubo ; Laurent Grenouillet ; Alexei Gruverman ; Jinseong Heo ; Michael Hoffmann ; H. Alex Hsain ; Fei-Ting Huang ; Cheol Seong Hwang ; Jorge Íñiguez ; Jacob L. Jones ; Ilya V. Karpov ; Alfred Kersch ; Taegyu Kwon ; Suzanne Lancaster ; Maximilian Lederer ; Younghwan Lee ; Patrick D. Lomenzo ; Lane W. Martin ; Simon Martin ; Shinji Migita ; Thomas Mikolajick ; Beatriz Noheda ; Min Hyuk Park ; Karin M. Rabe ; Sayeef Salahuddin ; Florencio Sánchez ; Konrad Seidel ; Takao Shimizu ; Takahisa Shiraishi ; Stefan Slesazeck ; Akira Toriumi ; Hiroshi Uchida ; Bertrand Vilquin ; Xianghan Xu ; Kun Hee Ye ; Uwe Schroeder

APL Mater. 11, 089201 (2023)