Unveiling Planar Defects in Hexagonal Group IV Materials
01 June 2021
Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties.
Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.
Hits: 749
Sustainable energy conversion & storage systems

Unveiling Planar Defects in Hexagonal Group IV Materials

Elham M. T. Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego de Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Ilaria Zardo, Jos E. M. Haverkort, Silvana Botti, Leo Miglio, Erik P. A. M. Bakkers, and Marcel A. Verheijen

Nano Lett. 2021, 21, 8, 3619–3625
Publication Date:April 12, 2021

Also at ICMAB

  • Interfaces and Interphases in Ca and Mg Batteries

    14 January 2022 134 hit(s) Energy
    The development of high energy density battery technologies based on divalent metals as the negative electrode is very appealing. Ca and Mg are especially interesting choices due to their combination of low standard reduction potential and natural abundance.
  • Giant Thermal Transport Tuning at a Metal / Ferroelectric Interface

    27 December 2021 253 hit(s) Energy
    Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator.
  • Storing energy with molecular photoisomers

    14 December 2021 317 hit(s) Energy
    The global energy demand continues to grow both due to the increasing population and wealth. As one of the potential solutions, renewable energy resources can relieve the pressure on conventional energy sources. However, due to fluctuations in both supply and demand, they need to be complemented with load-leveling technologies.

INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA, Copyright © 2020 ICMAB-CSIC | Privacy Policy | This email address is being protected from spambots. You need JavaScript enabled to view it.